Photoluminescence efficiency of zincblende InGaN/GaN quantum wells

Growing green and amber emitting InGaN/GaN quantum wells in the zincblende, rather than wurtzite, crystal phase has potential to improve efficiency. However, optimization of emission efficiency these heterostructures is still required compete with more conventional alternatives. Photoluminescence time decays were used assess how well width number affect recombination rates, temperature dependent photoluminescence was determine factors affecting The radiative lifetime found be approximately 600 ps increase weakly width, consistent a change exciton binding energy. relative at room by factor five when increased from one five. Furthermore, 2.2 2.5 7.5 nm. These results indicate that thermionic most important process reducing temperatures excess 100 K. Moreover, weak dependence rate on means increasing thickness an effective way suppressing thereby zincblende wells, contrast those grown wurtzite phase.